Thin-film magnetic head

Dynamic magnetic information storage or retrieval – Head – Hall effect

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Details

360122, G11B 512, G11B 530, G11B 522

Patent

active

043946992

ABSTRACT:
A thin-film magnetic head employing a magneto-resistive element (MR element), which comprises a substrate, a layer of MR element deposited on said substrate and a conductor layer for supplying said MR element with an electric current in the longitudinal direction thereof. The substrate has at least two crystal axes in the plane parallel to the surface on which said magnetoresistive element is disposed. The respective coefficients of thermal expansion in the directions of said two crystal axes are different from each other. The coefficients of thermal expansion in the directions of said two crystal axes, the orientations of said two crystal axes and the magnetostriction coefficient of the MR element are adjusted in a relationship whereby an internal stress is imparted due to the difference between the temperature during deposition of the MR element and the room temperature, and the thus imparted stress operates to provide the spins within the MR element with a tendency to be oriented in said longitudinal direction of the MR element.

REFERENCES:
patent: 3996095 (1976-12-01), Ahn
patent: 4164770 (1979-08-01), Jeffers
patent: 4225892 (1980-09-01), Bassett
patent: 4242710 (1980-12-01), Hempstead
patent: 4317147 (1982-02-01), Daughenbaugh

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