Rare earth silicide Schottky barriers

Details Rare earth silicide Schottky barriers Rare earth silicide Schottky barriers

1980-09-29

1983-07-19

Larkins, William D.

357 67, 357 71, H01L 2948

Patent

active

043946739

ABSTRACT:
In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of .gtorsim.0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (.gtorsim.0.8 eV) and low (.ltorsim.0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

REFERENCES:
patent: 3943552 (1976-03-01), Shannon et al.
patent: 3964084 (1976-06-01), Andrews et al.
patent: 4107835 (1978-08-01), Bindell et al.
patent: 4214256 (1980-07-01), Dalal et al.
Berenbaum et al., IBM Tech. Discl. Bulletin, vol. 22, No. 10, Mar. 1980, pp. 4521-4522.
Chu et al., IBM Tech. Discl. Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1054-1057.

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