Method of plasma enhanced chemical vapor deposition of phosphosi

Details Method of plasma enhanced chemical vapor deposition of phosphosi Method of plasma enhanced chemical vapor deposition of phosphosi

1981-08-07

1983-07-19

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 85, 427 95, 427 451, H01L 21316

Patent

active

043944019

ABSTRACT:
A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.

REFERENCES:
patent: 4223048 (1980-09-01), Engle
patent: 4289797 (1981-09-01), Akselrad
Rosler et al., "Plasma Enhanced CVD in a Novel LPCVD-Type System", Solid State Technology, vol. 24, No. 4, Apr. 1981, pp. 172-177.
Kern et al., "Advances in Deposition Processes for Passivation Films", J. Val. Sci. Technol, vol. 14, No. 5, Sep./Oct. 1977, pp. 1082-1099.
Hallahan, "Deposition of Plasma Silicon Oxide Thin Films in a Production Planar Reactor", J. Electrochem. Soc.: Electrochemical Science and Technology, vol. 126, No. 6, Jun. 1979, pp. 930-934.
Sinha et al., "Reactive Plasma Deposited Si-N Films for MOS-LSI Passivation", Journal of Electrochemical Society, Apr. 1978, pp. 601-608.
Electrochemical Society Meeting, "Extended Abstract", Properties of Plasma Deposited Silicon Oxide, 1979, pp. 262-265.

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