Method for reducing the effects of semiconductor substrate defor

Details Method for reducing the effects of semiconductor substrate defor Method for reducing the effects of semiconductor substrate defor

1993-04-09

1995-01-17

Thomas, Tom

Fishing, trapping, and vermin destroying

H01L 21324, H01L 21477

Patent

active

053825519

ABSTRACT:
A method is disclosed for reducing the effects of semiconductor deformities. Initially, a semiconductor substrate is provided. The substrate has at least one layer superjacent the substrate and at least one layer subjacent the substrate. Subsequently, the semiconductor structure is examined for warp and bow type deformities. As a result of this examination, the warp and bow measurements of the semiconductor structure are compared with a reference. In the event that the measured warp and bow exceed a predetermined tolerance, either the thickness of the layer superjacent or the thickness of the layer subjacent is reduced. This reducing step can be accomplished by chemical and/or mechanical planarization, dry etching, wet etching or plasma etching.

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patent: 5226403 (1993-07-01), Toyama
patent: 5230184 (1993-07-01), Bukhman
patent: 5234867 (1993-08-01), Schultz et al.

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