Method for manufacturing a semiconductor device including nonvol

Details Method for manufacturing a semiconductor device including nonvol Method for manufacturing a semiconductor device including nonvol

1992-08-26

1995-01-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, H01L 2170

Patent

active

053825390

ABSTRACT:
A method for manufacturing a semiconductor device having a diffusion region formed within a source. A one-conductivity type well is created in a semiconductor substrate, and marked off with field oxide layers. An insulating layer for holding charges is formed on a portion of the surface of the one-conductivity type well, onto which a conductive layer is applied. The insulating layer and the conductive layer are both etched to produce a memory charge storage and a control gate electrode, respectively. An opposite-conductivity type drain and source are formed in the one-conductivity type well. A one-conductivity type diffusion region is then formed within the opposite-conductivity type source, resulting in a memory cell having superior reliability.

REFERENCES:
patent: 3731163 (1973-05-01), Shuskus
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5047981 (1991-09-01), Gill et al.
patent: 5128895 (1992-07-01), Park
patent: 5183773 (1993-02-01), Miyata
patent: 5949309 (1990-08-01), Rao

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device including nonvol does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device including nonvol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device including nonvol will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-746952