Method of making thin film transistors

Details Method of making thin film transistors Method of making thin film transistors

1993-07-02

1995-01-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 21, 437 83, 437101, 437173, 117 3, H01L 21265

Patent

active

053825373

ABSTRACT:
When a thin film transistor is formed by forming a polycrystalline silicon thin film of a large grain size, the uniformity of film quality within an active region can be improved more reliably, whereby a carrier mobility of a transistor can be suppressed from being fluctuated. Therefore, the thin film transistor can be enhanced in efficiency. There is provided a method of making a thin film transistor in which a dot-shaped core from which crystal is to be grown is produced on an amorphous silicon thin film at its predetermined location and solid phase growth is performed to grow crystal to thereby form a silicon thin film. The core from which crystal is to be grown is produced on the thin film transistor at its portion near the outside of a region in which an active region is formed.

REFERENCES:
patent: 4727044 (1988-02-01), Yamazaki
patent: 4808546 (1989-02-01), Moniwa et al.

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