Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-12-05
1983-07-19
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 29577C, 29580, 148171, 148175, H01L 21205, H01L 21208
Patent
active
043935745
ABSTRACT:
A method of fabricating integrated circuits comprises forming a concave portion having bottom and side faces on a semiconductor single-crystal substrate, forming an insulating film on the faces of the concave portion except for at least a portion of the bottom face, and forming a first semiconductor growth layer on the insulating film-free portion of the bottom face of the concave portion by chemical vapor deposition using a mixture gas containing semiconductor chloride and hydrogen such that the top surface of the growth layer is the same level as the upper face of the substrate in the region adjoining the concave portion. Semiconductor devices are then fabricated in the substrate and growth layer. Alternatively, the first growth layer can be formed on the substrate and thereafter a concave portion can be etched in the first growth layer and then a second semiconductor growth layer can be formed on the bottom face of the concave portion such that the top surfaces of the first and second growth layers are at the same level. In another variation, the first growth layer can extend above the substrate surface, and a second growth layer can be formed on the substrate such that the top surface of the second growth layer is at the same level as that of the first growth layer.
REFERENCES:
patent: 3439414 (1969-04-01), Price
patent: 3514845 (1970-06-01), Legat et al.
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3905037 (1975-09-01), Bean et al.
patent: 3925120 (1975-12-01), Saida et al.
patent: 4141765 (1979-02-01), Druminski et al.
Adams Bruce L.
Burns Robert E.
Kabushiki Kaisha Daini Seikosha
Lobato Emmanuel J.
Ozaki G.
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