Dual EEPROM cell with current mirror differential read

Static information storage and retrieval – Floating gate – Particular biasing

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365207, 365208, 365210, 36518909, G11C 1604

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active

051483955

ABSTRACT:
An EEPROM device having dual EEPROM transistor blocks for storing a charge and a current mirror for determining the difference in charge between the EEPROM transistor blocks. During a write operation, one EEPROM transistor block is charged while the other block is discharged. During a read operation, the current mirror attempts to supply equal current to each of the EEPROM transistor blocks. However, because each block has a different charge, more current will be forced through one leg of the current mirror. This results in a voltage difference across the legs of the current mirror which can be read by a voltage sensor.

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Electronics, Mar. 17, 1986, "Found: The Final Link to the One-Chip System", pp. 30-34, Sierra Semiconductor Corporation.

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