Semiconductor device having U-groove

Details Semiconductor device having U-groove Semiconductor device having U-groove

1990-12-13

1992-09-15

Mintel, William

357 55, 357 54, 357 47, H01L 2712

Patent

active

051482576

ABSTRACT:
A dielectric isolation region of a bipolar semiconductor device having a U-groove which is covered over the inner surface thereof with an insulating film, and is filled with polysilicon. The surface of the U-groove polysilicon is covered with a silicon nitride film deposited by CVD technique. This structure permits the earlier steps of forming the dielectric isolation region and also the later steps of forming semiconductor elements to be carried out without causing the surface of the U-groove polysilicon to suffer thermal oxidation.

REFERENCES:
patent: 4635090 (1987-01-01), Tamaki et al.
patent: 4656497 (1987-04-01), Rogers et al.
patent: 4819054 (1989-04-01), Kawaji et al.
patent: 4907063 (1990-03-01), Okada et al.
IEDM Technical Digest, Hiroshi Goto et al. "An Isolation Technology for High Performance Bipolar Memories" pp. 58-60, 1982.

Affiliated with

Also associated with

Rating

Semiconductor device having U-groove does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having U-groove, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having U-groove will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-740491