Photoconductive avalanche GaAs switch

Details Photoconductive avalanche GaAs switch Photoconductive avalanche GaAs switch

1991-11-25

1992-09-15

Mintel, William

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 19, 357 16, 357 58, 357 13, 250211J, 359243, H01L 2714

Patent

active

051482517

ABSTRACT:
An optically activated avalanche GaAs switch having two opposing optical windows for receiving optical energy from an illumination source which may be, for example, a laser diode operating at a 1.06 micron wavelength. The switch is a semiconductor PIN structure including a substrate of intrinsic GaAs material within which is formed opposing highly doped deep recessed p+ and n+GaAs layers underlying a pair of ohmic contacts including outer annular layers of metallization which surround respective centrally located optical windows formed of AlGaAs. By illuminating the switch from opposite sides through the optical windows, electron-hole pairs are generated and a condition for an avalanche mode of operation is created in the center region of the device rendering it conductive.

REFERENCES:
patent: 4633286 (1986-12-01), Bovino
patent: 4984032 (1991-01-01), Miura et al.
patent: 5028971 (1991-07-01), Kim et al.
Kuchta et al., "Improved Contacts to Semi-Insulating GaAs Photoconductive itches Using a Graded Layer of InGaAs", Appl. Phys. Lett., 57 (15), Oct. 8, 1990, pp. 1534-1536.

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