Semiconductor protection device

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357 65, 357 20, H01L 2978, H01L 2974

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051482495

ABSTRACT:
A semiconductor device constitutes a protection diode including a second region of first conductivity type beneath a marginal portion of an interconnection pad which is not utilized for bonding. The second region, together with an area of second conductivity type, constitutes the protection diode for protection against a possible negative surge voltage.

REFERENCES:
patent: 4057844 (1977-11-01), Smedley
patent: 4072976 (1978-02-01), Havari
patent: 4342045 (1982-07-01), Kim
patent: 4567500 (1986-01-01), Avery
patent: 4730208 (1988-03-01), Sugino et al.
patent: 4806999 (1989-02-01), Strauss
patent: 4868621 (1989-09-01), Miyamoto
English language translation of Japanese Patent 57-187962 to Yamada.
Patent Abstracts of Japan, vol. 10, No. 108 (E-398)(2165) Apr. 23, 1986 & JP-A-60 246668, Dec. 6, 1985.
Patent Abstracts of Japan, vol. 7, No. 4 (E-151)(1149) Jan. 8, 1983 & JP-A-57 164571, Oct. 9, 1982.
EPO Search Report, EP 89 10 6712, Sep. 3, 1990.

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