Method of manufacturing semiconductor device having straight wal

Details Method of manufacturing semiconductor device having straight wal Method of manufacturing semiconductor device having straight wal

1994-03-11

1995-07-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437190, H01L 21441

Patent

active

054361982

ABSTRACT:
A remaining layer obtained by etching away a half of a resist layer along its depth direction which functions as a mask when a straight wall type bump is formed, is employed as a protection layer for a semiconductor element, so that the surface protection of the semiconductor element can be simply achieved.

REFERENCES:
patent: 5244833 (1993-09-01), Gensauge et al.
patent: 5270253 (1993-12-01), Arai et al.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device having straight wal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device having straight wal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having straight wal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-739500