Method of fabricating semiconductor structures via photo induced

Details Method of fabricating semiconductor structures via photo induced Method of fabricating semiconductor structures via photo induced

1990-09-05

1995-07-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, 437173, 437935, 437936, H01L 2120

Patent

active

054361923

ABSTRACT:
The technique of induced evaporation enhancement is used in MOCVD to accomplish geometrical variations via atomic level removal or thinning or negative growth techniques in situ during or after epitaxial growth thereby varying optical and electrical properties of fabricated semiconductor structures during growth. Among the structures capable of being fabricated are three dimensional buried heterostructures, transparent window lasers, multiple wavelength array lasers, index guided and antiguided mechanisms and transparent optical waveguide structures for optical signal coupling in integrated circuitry.

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