Dram cell process having elk horn shaped capacitor

Details Dram cell process having elk horn shaped capacitor Dram cell process having elk horn shaped capacitor

1994-04-26

1995-07-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 218242

Patent

active

054361885

ABSTRACT:
A new method for fabricating a microminiature capacitor, on a DRAM, having an increased electrode area was accomplished. The method involves utilizing the capacitor node contact opening in a relatively thick silicon oxide for making both the self-aligned contact and the bottom electrode of the capacitor. The bottom electrode is formed from a single continuous polysilicon layer that forms a conformable coating on the bottom and sides of the contact opening. The side walls of the contact opening are further etched to form curved or serpentine shaped sidewalls that enhance the area of the bottom capacitor electrode when the polysilicon layer is deposited.

REFERENCES:
patent: 5102820 (1992-04-01), Chiba
patent: 5145801 (1992-09-01), Chhabra
patent: 5240871 (1993-08-01), Doan et al.
patent: 5288655 (1994-02-01), Higasitani
patent: 5290726 (1994-03-01), Kim
patent: 5330928 (1994-07-01), Tseng

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