Method of manufacturing field effect transistors of the MOS-type

Details Method of manufacturing field effect transistors of the MOS-type Method of manufacturing field effect transistors of the MOS-type

1978-04-17

1979-07-10

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148188, 29571, 357 23, H01L 21225

Patent

active

041606833

ABSTRACT:
A method for producing field-effect transistors of the insulated-grid MOS-type, with a precise positioning of the gate in relation to the source and drain regions, providing for the preliminary formation of these regions (43) and (44) by diffusion from portions of doped silica, such as (70), these portions subsequently being used as masks for forming the gate (45) and establishing its external connection (72).

REFERENCES:
patent: 3334281 (1967-08-01), Ditrick
patent: 3434021 (1969-03-01), Hofstein
patent: 3658610 (1972-04-01), Arita et al.
patent: 3837071 (1974-09-01), Ronen
patent: 3959025 (1976-05-01), Polinsky

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