Method of simulating oxidation enhanced diffusion by solving par

Details Method of simulating oxidation enhanced diffusion by solving par Method of simulating oxidation enhanced diffusion by solving par

1998-05-28

2000-03-21

Teska, Kevin J.

39550023, 39550026, G06F 1750

Patent

active

060411740

ABSTRACT:
A process simulator for an oxidation enhanced diffusion formulates an enhanced velocity of diffusion coefficient into a partial differential equation expressed as (div grad F.sub.OED =F.sub.OED), and solves the partial differential equation through a conversion of discrete representation under the boundary conditions containing an oxidizing velocity at the boundary between a silicon layer and a silicon oxide layer so that the program sequence becomes simple.

REFERENCES:
patent: 5583789 (1996-12-01), Dahm et al.
patent: 5640331 (1997-06-01), Dahm et al.
patent: 5677846 (1997-10-01), Kumashiro
patent: 5819073 (1998-10-01), Nakamura
Michitada Morisue, "VLSI Design-Process Simulation", pp. 50-63, (1987) (No English Translation).
"Process Device Simulation Technology", pp. 92-123 (Partial English Translation).
Seiichi Isomae, "Semiconductor process Device Simulation Technology", pp. 79-89, (1994) (No English Translation).

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