Method of manufacturing an LDDFET having an inverted-T shaped ga

Details Method of manufacturing an LDDFET having an inverted-T shaped ga Method of manufacturing an LDDFET having an inverted-T shaped ga

1991-07-22

1992-09-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437192, 437193, H01L 2128, H01L 21336

Patent

active

051478145

ABSTRACT:
A semiconductor device having an insulating film on a semiconductor substrate, first and second conductive gate electrode films and first and second source/drain regions having impurities and disposed opposite to each other. A length of the second gate electrode is smaller than that of the first one. The device further includes side wall insulating films formed bilaterally of the gate electrodes.
A method of manufacturing the semiconductor device, involving the steps of forming the insulating film on the substrate, first and second conductive films and an MOS transistor gate electrode, effecting thermal annealing thereon, and performing ion-implantation of first and second impurities into the substrate with the gate electrode serving as a mask. The method further involves the step of forming a side-wall insulating film by effecting anisotropic etching.

REFERENCES:
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4906589 (1990-03-01), Chao
patent: 4963504 (1990-10-01), Huang et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 5032530 (1991-07-01), Lowrey et al.

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