Method for writing in an electrically modifiable non-volatile me

Details Method for writing in an electrically modifiable non-volatile me Method for writing in an electrically modifiable non-volatile me

1998-10-27

2000-03-21

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518519, 36518528, 36518529, G11C 1600

Patent

active

060409940

ABSTRACT:
A method for writing in an electrically erasable and programmable non-volatile memory (EEPROM, Flash EEPROM) includes keeping a gate of a selection transistor at its maximum value for the erasure or programming of a memory cell, so long as the potential at a drain or source of the transistor is not zero or at a very low level. This increases the lifetime of the selection transistors.

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patent: 5949709 (1999-09-01), Birnie

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