Thin film gas sensor

Details Thin film gas sensor Thin film gas sensor

1991-06-10

1992-09-15

Niebling, John

Chemistry: electrical and wave energy

Apparatus

Electrolytic

G01N 2726

Patent

active

051475235

ABSTRACT:
A gas sensor senses gas using a metal oxide semiconductor whose resistance changes depending on gas adhesion on a surface of the metal oxide semiconductor. The gas sensor includes a base structure, and a gas sensitive layer formed on the base structure and made of a metal oxide semiconductor. The gas sensitive layer has a multi-layer structure which includes at least two layer portions having mutually different grain structures.

REFERENCES:
patent: 4839020 (1989-06-01), Yamaguchi et al.
patent: 5003812 (1991-02-01), Yagawara

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