Silicon-on-insulator technique with buried gap

Details Silicon-on-insulator technique with buried gap Silicon-on-insulator technique with buried gap

1994-11-21

1995-08-01

Fourson, George

Fishing, trapping, and vermin destroying

437 24, 437927, 437 69, H01L 2176

Patent

active

054380154

ABSTRACT:
A silicon-on-insulator (SOI) isolation structure of a silicon substrate, which has buried gaps between active regions and the substrate, and field oxides to support the active regions. The buried gap is formed by etching an implanted buried silicon nitride layer. Since the dielectric constant of the buried gap is approximately 1, the dielectric effect and isolating effect of this structure are greatly improved.

REFERENCES:
patent: 4888300 (1989-12-01), Burton
patent: 4925805 (1990-05-01), Van Ommen et al.
patent: 5204282 (1993-04-01), Tsuruta et al.
patent: 5232866 (1993-08-01), Beyer et al.

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