Fishing – trapping – and vermin destroying
Patent
1993-11-09
1995-08-01
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 29, 437 44, 437 52, 437919, H01L 21265
Patent
active
054380081
ABSTRACT:
A semiconductor device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and having a first source diffusion region, a first drain diffusion region and a first gate electrode, a second transistor formed on the semiconductor substrate adjacent to the first transistor and having a second source diffusion region, a second drain diffusion region and a second gate electrode, a field oxide layer formed on the semiconductor substrate for isolating the first and second transistors, a first insulator layer which covers a surface of the semiconductor substrate including a surface of the first transistor but excluding a surface of the second transistor, where the first insulator layer has a side wall portion, and a second insulator layer formed at the side wall portion of the first insulator layer and a side wall portion of the second gate electrode of the second transistor.
REFERENCES:
patent: 4760033 (1988-07-01), Mueller
patent: 4874713 (1989-10-01), Gioia
Chaudhuri Olik
Fujitsu Limited
Tsai H. Jey
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