Method of fabricating field effect transistor having polycrystal

Details Method of fabricating field effect transistor having polycrystal Method of fabricating field effect transistor having polycrystal

1993-09-28

1995-08-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 45, 437191, H01L 21265, H01L 2144, H01L 2148

Patent

active

054380073

ABSTRACT:
A field effect transistor includes a polycrystalline silicon gate having a semiconductor junction therein. The semiconductor junction is formed of first and second oppositely doped polycrystalline silicon layers, and extends parallel to the substrate face. The polycrystalline silicon gate including the semiconductor junction therein is perfectly formed by implanting ions into the top of the polycrystalline silicon gate simultaneous with implantation of the source and drain regions. The semiconductor junction thus formed does not adversely impact the performance of the field effect transistor, and provides a low resistance ohmic gate contact. The gate need not be masked during source and drain implant, resulting in simplified fabrication.

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