Structure to provide junction breakdown stability for deep trenc

Details Structure to provide junction breakdown stability for deep trenc Structure to provide junction breakdown stability for deep trenc

1992-12-22

2000-03-21

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257104, 257106, 257496, 257513, 257514, 257515, 257592, 257594, 257604, 257605, H01L 27082, H01L 29861, H01L 2358, H01L 2900

Patent

active

060406178

ABSTRACT:
The present invention is directed to an improved deep trench structure, for use in junction devices, which addresses junction breakdown voltage instabilities of the prior art. The primary, or metallurgical, junction where avalanche breakdown occurs is moved away from the surface dielectric into the bulk silicon by adding a lightly doped layer adjacent to the deep trench. A preferred embodiment suitable for isolated structures places the doped layer adjacent to the sidewalls of the deep trench. A second preferred embodiment, suitable for non-isolated structures, places the doped layer adjacent to both the floor and the sidewalls of the trench.

REFERENCES:
patent: Re28653 (1975-12-01), Murphy
patent: 4153904 (1979-05-01), Tasch, Jr. et al.
Yuk L. Tsang and John M. Aitken, "Junction Breakdown Instabilities in Deep Trench Isolation Structures," IEEE Transactions on Electron Devices, vol. 38, No. 9, Sep. 1991, pp. 2134-2138.

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