Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1995-07-24

1998-01-20

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 21, 437 99, 437924, 437967, 257979, H01L 2184

Patent

active

057100500

ABSTRACT:
The semiconductor device of the invention includes: a substrate having an insulating surface; and an active region which is formed on the insulating surface of the substrate and is constituted by a crystalline silicon film. In the semiconductor device, the active region is formed inside a crystalline silicon region formed by selective crystallization of an amorphous silicon film, and the active region is positioned by performing a mask alignment using a boundary between an amorphous silicon region of the amorphous silicon film and the crystalline silicon region.

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