Method of coating semiconductor substrates

Details Method of coating semiconductor substrates Method of coating semiconductor substrates

1976-01-22

1979-02-27

Lesmes, George F.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

29576R, 29584, 118 495, 204192S, 427 94, 427 95, 427248B, B05D 108, B05D 512, C23C 1108

Patent

active

041420047

ABSTRACT:
A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moderately high density silicon-nitrogen films which have low tensile stress and good crack resistance. In addition, these films provide good step coverage, good scratch resistance, and an inert barrier to sodium and moisture.

REFERENCES:
patent: B554164 (1976-03-01), Graul et al.
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3637423 (1972-01-01), Sestrich
patent: 3652324 (1972-03-01), Chu et al.
patent: 3672983 (1972-06-01), De Witt et al.
patent: 3757733 (1973-09-01), Reinburg
patent: 3900944 (1975-08-01), Fuller et al.
patent: 3961103 (1976-06-01), Aisenberg
Hu et al., "Deposition of Silicon Nitride by RF Sputtering in Ammonia and Argon Mixture", in IBM Technical Disclosure Bulletin, vol. 10, No. 2, p. 100.

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