Light-emitting diode of edge-emitting type, light-receiving devi

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 98, 257465, 257466, 257622, 372 46, 372 48, 372 50, H01L 3300

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active

056659857

ABSTRACT:
A semiconductor device includes a semiconductor substrate, and a plurality of semiconductor layers formed on the semiconductor substrate and forming a concave lateral surface, the semiconductor layers including an active layer for either emitting light or receiving light, wherein the concave lateral surface is used as either a light-emitting surface or a light-receiving surface.

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Wright et al., "High-Efficiency Stripe-Geometry InGaAsP DH Lasers (.lambda.=1.3 .mu.m) with Chemically-etched Mirrors", IEEE Electron Device Letters, vol. EDL-1, No. 11, Nov., 1980, pp. 242-243.
"Assessment of a LED Array Light Source for Optical Printer", by Kazuyasi Tateishi and Shingenaga Nakaya, Proceedings of the 1980 IEIC Conference, Communication Field, No. 1, p. 211, 1980.

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