Semiconductor light emitting device with defect decomposing and

Details Semiconductor light emitting device with defect decomposing and Semiconductor light emitting device with defect decomposing and

1996-08-02

1997-09-09

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 96, 257 97, 257103, 257200, 372 43, 372 44, 372 45, H01L 3300

Patent

active

056659776

ABSTRACT:
A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

REFERENCES:
patent: 4866489 (1989-09-01), Yokogawa
patent: 5012476 (1991-04-01), Razeghi et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5117477 (1992-05-01), Satoh
patent: 5268918 (1993-12-01), Akimoto et al.

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