Coherent light generators – Particular active media – Semiconductor
Patent
1994-05-31
1995-03-14
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
053982550
ABSTRACT:
A semiconductor laser having a mesa stripe structure with two sides thereof buried by layers comprises a p-InP buried layer, a p-InP current blocking layer, an InGaAsP current blocking layer, and an n-InP current blocking layer. The n-InP current blocking layer is electrically independent by being isolated by the p-InP current blocking layer and the p-InP buried layer which are in touch with each other at the two sides of the mesa stripe structure. With this arrangement, the leakage current is reduced enabling to improve temperature characteristics even at a temperature above 85 degrees.
REFERENCES:
patent: 5325385 (1994-06-01), Kasukawa et al.
S. Yamashita et al, "Low Threshold (3.2 mA per Element) 1.3 .mu.m InGaAsP MQW Laser Array on a p-Type Substrate", IEEE Photonics Technology Letters, vol. 4, No. 9, Sep. 1992, pp. 954-957.
Oka et al, "Low-threshold 1.3 .mu.m MQW laser array for optical interconnections", Technical Report of IEICE, OQE92-168, 1993-02, pp. 13-18 (no month).
Y. Ohkura et al, "Low Threshold FS-BH Laser on p-InP Substrate Grown by All-Mocvd", Electronics Letters, Sep. 1992, vol. 28, No. 19, pp. 1844-1845.
Davie James W.
NEC Corporation
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