Static information storage and retrieval – Floating gate – Particular biasing
Patent
1994-05-09
1995-03-14
LaRoche, Eugene R.
Static information storage and retrieval
Floating gate
Particular biasing
365149, 257301, 257306, 257309, G11C 1134, H01L 2968
Patent
active
053982053
ABSTRACT:
A semiconductor memory device including a plurality of memory cells of one-transistor and one-capacitor type is disclosed. Each of the memory cells includes a cell active region surrounded by a trench isolation region, a trench formed to cross the cell active region to thereby divide a surface portion of the cell active region into first and second parts, a word line formed in the trench in isolation form the cell active region by a gate insulating film, source and drain regions respectively formed in the first and second parts in contact with the trench, a first insulating film formed to cover the cell active region and the word line, a bit line formed in contact with a part of the drain region through a first contact hole provided in the first insulating film, a second insulating film formed to cover the bit line and the first insulating film, a storage electrode formed in contact with a part of the source region through a second contact hole provided in the first and second insulating films, a dielectric film formed on the storage electrode, and a cell plate electrode formed on the dielectric film.
REFERENCES:
patent: 4796228 (1989-01-01), Baglee
patent: 4979004 (1990-12-01), Esquivel et al.
patent: 5042008 (1991-08-01), Iwasa et al.
patent: 5146426 (1992-09-01), Mouwerjee et al.
patent: 5250458 (1993-10-01), Tsukamoto et al.
patent: 5309008 (1994-05-01), Watanabe
S. Kimura et al., "A New Stacked Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-line Structure", IEDM, 1988, pp. 596-599.
LaRoche Eugene R.
NEC Corporation
Nguyen Tan
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