Reprogrammable nonvolatile semiconductor memory formed of MOS tr

Details Reprogrammable nonvolatile semiconductor memory formed of MOS tr Reprogrammable nonvolatile semiconductor memory formed of MOS tr

1993-05-17

1995-03-14

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular biasing

36518901, 365218, G11C 1604

Patent

active

053982029

ABSTRACT:
A reprogramming method of a nonvolatile semiconductor memory formed of MOS transistor cells is provided. Data values are written to transistors of one of groups which is obtained by dividing the entire MOS transistors, and one of the transistors whose data values are written is selected. Then, the data value written in the selected transistor is erased. The selection and erasing are repeated until the data values written in the desired transistors are erased. Thus, reprogramming of the memory is finished. Since the threshold voltage of the transistor erased is well controlled, the threshold voltage dispersion after reprogramming can be reduced.

REFERENCES:
patent: 5016215 (1991-05-01), Tigelaar
patent: 5191556 (1993-03-01), Radjy
patent: 5199001 (1993-03-01), Tzeng

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