Method of making a ternary barrier structure for conductive elec

Metal working – Method of mechanical manufacture – Electrical device making

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29590, 228193, 228254, 427 89, H01R 4300

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active

040819019

ABSTRACT:
A ternary barrier structure and method for forming the structure to be used on a conductive electrode. In electronic structures, dielectric substrates are used which have a plurality of connecting conductive areas which are wettable by solder. The region surrounding these connecting conductive areas are not wettable by solder. Barrier structures are used to prevent the flow of the solder while the solder is liquid during the manufacture of these electronic products. The present barrier structure covers at least a portion of one of these connecting conductive electrodes wherein the electrode is composed predominately of silver and a lesser quantity of one or more of the platinum metals. The barrier structure includes a gold bearing, non-wettable by solder, glaseous layer over a portion of the electrode. The portion of the conductive electrode under and adjacent to the barrier glaseous layer contains a gold-silver alloy which is produced during the formation of the barrier structure by diffusion of the gold from the glaseous layer into the conductive electrode. A particularly corrosion resistant barrier structure and conductive electrode combination is thereby produced at this rather critical point in the microminiature circuit structure.

REFERENCES:
patent: 3597665 (1971-08-01), Quetsch et al.
patent: 3807625 (1974-05-01), Brown et al.

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