Coherent light generators – Particular active media – Semiconductor
Patent
1994-01-26
1995-04-18
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 96, 372 26, 372 99, 372107, H01S 319
Patent
active
054084865
ABSTRACT:
The surface emitting laser of the present invention provided with a resonator has a structure in which a quantum well structure where a light absorption wavelength region is changed due to the Wannier-Stark effect or quantum-confinement Stark effect is formed in the non-doped Distributed Bragg Reflector mirror at the opposite side to a semiconductor substrate out of a pair of Distributed Bragg Reflector mirrors sandwiching the resonator.
REFERENCES:
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5208820 (1993-05-01), Kurihara et al.
Journal of Crystal Growth, vol. 120, No. 1/4, 11 May 1992, Amsterdam NL pp. 349-352 C. Stark et al `Well-size dependence of electrooptic effects in GalnAsP/InP quantum wells grown by MBE`.
Patent Abstracts of Japan vol. 17, No. 19 (E-1306) 13 Jan. 1993 & JP-A-04 247 676 (NTT).
Patent Abstracts of Japan vol. 13, No. 330 (E-793) 25 Jul. 1989 & JP-A-01 094 689 (Furukawa Electric Ind Co Ltd.).
Applied Physics Letters, vol. 60, No. 6, 10 Feb. 1992, New York US pp. 686-688 M. Jupina et al `InAs/GaAs short period strained layer superlattices grown on GaAs as quantum confined stark effect modulators`.
Patent Abstracts of Japan vol. 16, No. 123 (P-1330) 27 Mar. 1992 & JP-A-03 290 614 (NEC).
Epps Georgia Y.
Fujitsu Limited
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