Apparatus and method for adjusting the threshold voltage of MOS

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327534, 327546, H03K 301, H03L 100

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active

053979346

ABSTRACT:
An apparatus and method for adjusting the effective threshold voltage of a MOS transistor is disclosed. Reference voltage generation circuitry is used for generating a first voltage signal. Threshold voltage monitoring circuitry that includes the MOS transistor is used for measuring the effective threshold voltage of the MOS transistor and for generating a second voltage signal. Feedback circuitry compares the first voltage signal to the second voltage signal and adjusts the effective threshold voltage of the MOS transistor so that the first voltage signal is substantially equal to the second voltage signal. The effective threshold voltage of the MOS transistor is adjusted by adjusting its source-body voltage potential. The method includes the steps of generating a first voltage signal, measuring the effective threshold voltage of the MOS transistor, generating a second voltage signal, comparing the first voltage signal to the second voltage signal, and adjusting the effective threshold voltage of the MOS transistor so that the second voltage signal is substantially equal to the first voltage signal.

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Takashi Hori, "1/4 .mu.m Large-Tilt-Angle Implanted Drain (LATID) Device Technology", National Technical Report (Matsushita Electric Industry Co.), vol. 36, No. 4, pp. 84-89, Aug. 1990.
M. J. Deen & Jing Wang, "Design Considerations for the Operation of CMOS Inverters at Cryogenic Temperatures", Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductors, Oct. 19-23, 1987, Electrochem. Soc., pp. 108-116, 1989.
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G. C. Luckett, "Substrate Voltage Generator with Compensation for Depletion-Mode and Enhancement-mode Field-Effect Transistors", Dec. 1981, pp. 3537-3538.
P. Pleshko et al, "MOS Transistor Electronic Stabilization of Thresholds," vol. 10, No. 3 Aug. 1967 pp. 336-337.

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