Fluorinated silicon nitride films

Details Fluorinated silicon nitride films Fluorinated silicon nitride films

1995-04-27

1996-07-23

Turner, A. A.

Electricity: conductors and insulators

Insulators

Special application

174255, 174137R, 428698, H01C 710

Patent

active

055391540

ABSTRACT:
A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride film on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4. Films prepared by the process are disclosed and their properties are described.

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"Low Temperature Silicon Nitride Deposition Using Microwave-Excited Active Nitrogen," by Shibagaki et al.; Japanese Journal of Applied Physics, vol. 17, Supplement 17-1, (1978), pp. 215-221.

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