Method for fabricating a semiconductor contact and interconnect

Details Method for fabricating a semiconductor contact and interconnect Method for fabricating a semiconductor contact and interconnect

1982-09-08

1988-08-02

James, Andrew J.

357 75, 357 71, H01L 2348, H01L 2506, H01L 2508

Patent

active

047616814

ABSTRACT:
A method for fabricating a semiconductor device and the semiconductor device so fabricated, wherein the method includes the steps of forming a mesa upon one side of a semiconductor surface and then forming a conduction path from the mesa extending through the slice to the opposite side of the semiconductor substrate. Aluminum/silicon alloy droplets are deposited on the first side and form a liquid eutectic which extends to the opposite side by providing a thermal gradient across the slice causing thermomigration of the liquid eutectic. An electrical circuit is then formed on the opposite side and electrically connected to the metal conductor extending through the substrate as formed by the thermomigration of the liquid eutectic. A semiconductor structure is also described that includes an elevated surface upon the first side of a semiconductor substrate and an indentation in the other side, also the combination of two or more such substrates arranged in a stacked configuration. The elevated surface has an electrically conductive layer thereon which is connected to an electrically conductive material extending from the elevated surface to the indentation in the opposite side of the semiconductor substrate. At least one electrical circuit element is located on the opposite side of the semiconductor substrate and electrically connected to said conductive material upon the opposite side of the substrate.

REFERENCES:
patent: 3577037 (1971-05-01), DiPietro
patent: 3648131 (1972-03-01), Stuby
patent: 4074342 (1978-02-01), Honn et al.
patent: 4127863 (1978-11-01), Kurata
patent: 4246595 (1981-01-01), Noyori et al.

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