Integrated circuit semiconductor device

Details Integrated circuit semiconductor device Integrated circuit semiconductor device

1987-02-26

1988-08-02

Edlow, Martin H.

357 238, 357 54, 357 51, 357 41, H01L 2978, H01L 2702, H01L 2934

Patent

active

047616784

ABSTRACT:
An integrated circuit semiconductor device in which a first insulating layer including a silicon nitride film and a second insulating layer including a silicon oxide film thermally grown are formed on a major surface of a silicon substrate and contacted each other at respective side edges to form a boundary is disclosed. First and second electrodes are formed on the first and second insulating layers, respectively and separated each other with a gap. A third insulating layer fills the gap and contacts to both of peripheral surface sections of the first and second insulating layers extending from the boundary, respectively.

REFERENCES:
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patent: 4343657 (1982-08-01), Ito et al.
patent: 4511911 (1985-04-01), Kenney
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 4621277 (1986-11-01), Ito et al.
patent: 4622570 (1986-11-01), Taguchi
patent: 4672409 (1987-06-01), Takei et al.
IBM Tech. Disclo. Bull., vol. 26, No. 5, 10/83, Chao et al.

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