Semiconductor device having new conductive interconnection struc

Details Semiconductor device having new conductive interconnection struc Semiconductor device having new conductive interconnection struc

1987-01-22

1988-08-02

James, Andrew J.

357 67, 357 71, H01L 2928

Patent

active

047616776

ABSTRACT:
A reliable multilevel interconnection structure is attained by using polyacetylene layers. Nondoped polyacetylene is dielectric but is conductive when it is doped with an impurity such as AsF.sub.5, which makes it possible to eliminate the necessity of opening a contact hole or through hole in an insulating layer in a process for manufacturing a multilevel interconnection structure so that a disconnection and/or short circuit does not occur due to the evenness of the layers even if the layer of numbers is increased.

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Applied Physics Letters, "The Mechanism of Schottky-Barrier Formation in Polyacetylene", Waldrop et al., vol. 38, No. 1, Jan. 1, 1981, pp. 53-55.

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