Method of manufacturing semiconductor integrated circuit device

Details Method of manufacturing semiconductor integrated circuit device Method of manufacturing semiconductor integrated circuit device

1994-06-24

1995-03-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437978, 437 63, 437 64, 148DIG50, H01L 2176

Patent

active

053977319

ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device includes the steps of: sequentially forming a silicon oxide film, a silicon nitride film, a polysilicon film; and a protective film on a silicon substrate, etching and removing the protective film from a shallow groove formation region to expose a surface of the polysilicon film; etching and removing the protective film, the polysilicon film, the silicon nitride film, and the silicon oxide film from a deep groove formation region to expose asurface of the silicon substrate; etching the silicon substrate and the polysilicon film, both of which are exposed, using the protective film as a mask to form agroove having a predetermined depth in the deep groove formation region; etching and removing at least the silicon oxide film left in the shallow groove formation region to expose a surface of the silicon substrate; and simultaneously etching the silicon substrate in the deep and shallow groove formation regions using the protective film as a mask to form deep and shallow grooves.

REFERENCES:
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4551911 (1985-11-01), Sasaki et al.
patent: 4679306 (1987-07-01), Shimizu
patent: 4749661 (1988-06-01), Bower
patent: 4988639 (1991-01-01), Aomura
patent: 5011788 (1991-04-01), Kawaji et al.
patent: 5340755 (1994-08-01), Zwicknagl et al.

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