Method of forming a floating gate programmable read only memory

Details Method of forming a floating gate programmable read only memory Method of forming a floating gate programmable read only memory

1994-07-20

1995-03-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 29, 437 52, 437 70, H01L 2170

Patent

active

053977270

ABSTRACT:
A method of forming a floating gate programmable read only memory cell transistor in a semiconductor substrate includes, a) providing a fully patterned floating gate atop the semiconductor substrate; b) oxidizing the semiconductor substrate to define a field oxide region and an active region, the floating gate being provided within the active region; c) providing a floating gate dielectric layer outwardly of the floating gate; d) after providing the floating gate and the field oxide region, masking the active region while conducting a channel stop implant through the field oxide region to within the substrate beneath the field oxide region; and e) after conducting the channel stop implant, providing a patterned word line over the floating gate dielectric layer.

REFERENCES:
patent: 5004701 (1991-04-01), Motokawa
patent: 5227326 (1993-07-01), Walker

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