Method of manufacturing thin film transistor

Details Method of manufacturing thin film transistor Method of manufacturing thin film transistor

1993-02-19

1995-03-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 29, 437913, 148DIG150, H01L 21265

Patent

active

053977181

ABSTRACT:
In a method of manufacturing a thin film transistor, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Then, impurity ions generated on high frequency discharge are introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. Then, the introduction depth of impurities and the amount of the impurities to be introduced in the channel region can be controlled or the threshold voltage of the thin film transistor can be controlled. This method can be applied to a large substrate.

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Komatsu, English abstract of 03-276765-JA.
"Formation of Source and Drain Regions for a Si:] Thin-Film Transistors by Low-Energy Ion Doping Technique", Yoshida et al., IEEE Electron Device Letters, vol. 9, No. 2, Feb. 1988, pp. 90-93.

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