Manufacturing method for a diamond electric device

Fishing – trapping – and vermin destroying

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437126, 437913, 437127, H01L 21265

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active

055389112

ABSTRACT:
An electric device such as a light emitting device utilizing a diamond film is described. The diamond film is partially doped with an impurity selected from Group IIb or VIb of the periodic table. The doping is performed with a patterned semiconductor film as a mask in a self-aligning manner. An electrode arrangement is formed on the semiconductor film or the doped diamond film so that stability of contacts can be obtained.

REFERENCES:
patent: 3873373 (1975-03-01), Hill
patent: 4764804 (1988-08-01), Sahara et al.
patent: 4889783 (1989-12-01), Yamazaki
S. Wolf + R. N. Tauber, Silicon Processing for the VLSI Era vol. 1: Process Technology, Lattice Press; Sunset Beach, CA, (1986) pp. 321-323.
Iwaki, M., et al. "Electrical conductivity of nitrogen and argon implanted diamond" Nuclear Instrum. & Methods Phy. Res. vol. 209-210, pt. 2, pp. 1129-1133, 1-15, May 1983.

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