Method for manufacturing a BiCMOS semiconductor device

Details Method for manufacturing a BiCMOS semiconductor device Method for manufacturing a BiCMOS semiconductor device

1995-04-27

1996-07-23

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 59, 437 55, 148DIG9, H01L 21265

Patent

active

055389082

ABSTRACT:
A semiconductor BiCMOS device and method of manufacturing suitable for attaining high packing density and thereby speeding up a switching operation, wherein the device is formed to have one of a source region or a drain region of an MOS transistor be immediately adjacent a base region of a bipolar transistor so as to be electrically connected. In this manner, an electrical terminal is eliminated, thereby permitting a higher packing density.

REFERENCES:
patent: 4948990 (1990-08-01), Shin et al.
patent: 5001074 (1991-03-01), Arborg
patent: 5043600 (1991-08-01), Horiuchi
patent: 5049765 (1991-09-01), Young et al.
patent: 5104817 (1992-04-01), Scott
patent: 5111077 (1992-05-01), Young et al.
patent: 5250856 (1993-10-01), Burton et al.

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