Semiconductor laser diode including ridge and partially disorder

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 48, 372 96, 257623, 437129, H01S 319

Patent

active

059600209

ABSTRACT:
A ridge type laser diode with a stabilized horizontal transverse mode and little variation in peak output power and a method for producing the laser. The ridge type laser diode includes a semiconductor substrate; an active layer on the semiconductor substrate, the active layer being interposed between a lower cladding layer and an upper cladding layer; and a ridge waveguide having a width, the ridge waveguide being part of the upper cladding layer so that the active layer located directly opposite the ridge waveguide is a first high refractive index region having a first refractive index; and a second high refractive index region in the central part of the first high refractive index region, having a second, higher refractive index than the first refractive index, and formed by disordering a region other than the central part and having a width less than the width of the ridge waveguide.

REFERENCES:
patent: 5138626 (1992-08-01), Yap
patent: 5412680 (1995-05-01), Swirhun et al.
patent: 5581570 (1996-12-01), Yoshida et al.
patent: 5757835 (1998-05-01), Ono et al.

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