Static information storage and retrieval – Addressing – Plural blocks or banks
Patent
1997-12-29
1999-09-28
Nelms, David
Static information storage and retrieval
Addressing
Plural blocks or banks
36518904, 365200, G11C 800
Patent
active
059599294
ABSTRACT:
In a multi-bank memory system such as a synchronous dynamic random access memory (SDRAM), a method of writing data to the banks is provided. This method allows for writing to any number of banks. More particularly, this method allows for writing to a selected number of banks between one and all banks. In addition, the method retains the discrete nature of the selected banks by allowing any row in each bank to be accessed regardless of the rows activated in other banks. As a result, rows of different memory banks that are intended to store similar data may be accessed simultaneously for purposes of writing the data in test and non-test modes. This allows for quicker writing to the SDRAM without the errors that may be created by other fast writing modes, such as data compression.
REFERENCES:
patent: 5390308 (1995-02-01), Ware
patent: 5430676 (1995-07-01), Ware et al.
patent: 5434817 (1995-07-01), Ware et al.
patent: 5511024 (1996-04-01), Ware et al.
patent: 5600605 (1997-02-01), Schaefer
patent: 5636173 (1997-06-01), Schaefer
patent: 5673233 (1997-09-01), Wright et al.
patent: 5835435 (1998-11-01), Bogin et al.
patent: 5841726 (1998-11-01), Williams et al.
DRAM Data Book, Micron Technology, Inc., 1996. DRAM Data Book, Micron Technology, Inc., 1997.
Synchronous DRAM: Functional Specification, 4M.times.16 SDRAM, Micron Technology, Inc., 1997, pp. 1-47.
400 Mb/s/PIN SLDRAM: Functional Specification, 4M.times.18 SLDRAM, Micron Technology, Inc., 1997, pp. 1-59.
Cowles Timothy B.
Wright Jeffrey P.
Brantley Charles
Le Thong
Micro)n Technology, Inc.
Nelms David
LandOfFree
Method for writing to multiple banks of a memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for writing to multiple banks of a memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for writing to multiple banks of a memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-711463