Device for generating a plasma by means of cathode sputtering an

Details Device for generating a plasma by means of cathode sputtering an Device for generating a plasma by means of cathode sputtering an

1993-08-17

1995-03-14

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429807, 20429819, C23C 1434

Patent

active

053974484

ABSTRACT:
The invention relates to a device for generating a plasma by means of cathode sputtering and microwave irradiation. This device comprises a magnetron cathode over which is placed a microwave cavity resonator at the atmosphere side. At the vacuum side the device comprises laterally delimiting shielding sheets which on their inside are provided with a magnet which generates a magnetic field perpendicular to the surface of the target of the magnetron cathode.

REFERENCES:
patent: 4610770 (1986-09-01), Saito et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 5230784 (1993-07-01), Yoshida
Yoshida, YHoshikazu: "Microwave-enhanced magnetron sputtering." Rev. Sci. Instrum. 63(1), Jan. 1992, pp. 179-183.
Matsuoka, Morito, et al.: "Unbalanced potential discharge characteristics for opposed-targets sputtering system". J. Vac. Sci. Technol. A5(1), Jan./Feb. 11987, pp. 52-56.
M Michiyori et al. "Formation on CoNbZr films by a dc opposing-target sputtering method." Appl. Phys. Lett. 49(14), 6 Oct. 1986, pp. 901-902.
Nakagawa, Yashuhiko, et al. "New Piezoelectric Ta.sub.2 O.sub.5 thin films," Appl. Phys. Lett, 46(2), 15 Jan. 1985, pp. 139-140.
Takahashi, Takakazu et al: "High Rate and Low Temperature Disposition of Co-Cr Films by Exposed Pole Magnetron Co-Sputtering System." Jap. J. Appl. Phys., vol. 24, (1985) S.L752-L754.
JP 62- 151561 A,: Patents Abstracts of Japan, C-464, Dec. 12, 1987, vol. 11, No. 381.

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