Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1984-04-30
1985-03-12
Newsome, John H.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 451, 427 85, 427 86, B05D 306
Patent
active
045045186
ABSTRACT:
A low pressure process for making amorphous semiconductor alloy films and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications.
The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, introducing into the vessel at least one reaction gas and evacuating the vessel to a low enough deposition pressure to deposit the film at high deposition rates with high reaction gas conversion efficiencies without any significant powder or polymeric inclusions. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reaction gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF.sub.4). To all of the foregoing, hydrogen (H.sub.2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammonia gas to widen the band gap of the alloys.
REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4363828 (1982-12-01), Brodsky et al.
Brodsky et al., IBM TDB, vol. 22, No. 8A, Jan. 1980, pp. 3391, 3392.
Cohen, Electronics, vol. 54, No. 22, Nov. 1981, pp. 82, 84.
Aktik et al., J. App. Phys., vol. 53, 1982, pp. 439-441.
Brassard et al., Journal de Physique, Colloque C4, Supplement an No. 10, Tome 42, pp. C4-795 to C4-798, Oct. 1981.
Mailhiot et al., Journal of Non-Crystalline Solids, vol. 35 and 36, 1980, pp. 207-212.
Currie et al., Proceedings National Conference on Solar Energy, Solar Energy Society of Canada Inc., pp. 101-104.
Allred David D.
Hudgens Stephen J.
Ovshinsky Stanford R.
Walter Lee
Citkowski Ronald W.
Energy Conversion Devices Inc.
Newsome John H.
Siskind Marvin S.
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