Vertical non-single crystal semiconductor field effect transisto

Details Vertical non-single crystal semiconductor field effect transisto Vertical non-single crystal semiconductor field effect transisto

1984-07-23

1987-05-26

Munson, Gene M.

357 4, 357 237, 357 41, 357 45, 357 59, 357 63, H01L 2978, H01L 2702, H01L 4902, H01L 2710

Patent

active

046689699

ABSTRACT:
Apparatus is provided with at least a FET. The FET is formed of a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a insulating layer extending on the side surface of the second semiconductor layer and a conductive layer extending on the insulating layer in opposing relation to the side surface of the second semiconductor layer. In this case, the first, second and third semiconductor layers are formed of a non-single crystal semiconductor doped with a dangling bond neutralizer. The first and third semiconductor layers have the same conductivity type. The second semiconductor layer has a higher resistivity than the first and third semiconductor layers.
The first and third semiconductor layers serve as either one of the drain and source and the other of them, respectively. The second semiconductor layer serves as channel region. The insulating layer and the conductive layer serve as gate insulating layer and gate electrode, respectively.

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patent: 4431271 (1984-02-01), Okubo
patent: 4470060 (1984-09-01), Yamazaki
Drangeid, "High-Speed Field-Effect Structure", IBM Technical Disclosure Bulletin, vol. 11, (8168), pp. 332-333.
Le Comber et al, "Amorphous-Silicon Field-Effect Device . . . ", Electronics Letters, vol. 15, (15, Mar. 1979), pp. 179-181.
Hayama et al, "Amorphous-Silicon Thin-Film Metal-Oxide Semiconductor Transistors", Appl. Phys. Lett., vol. 39, (1, May 1980), pp. 745-755.

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