Semiconductor device with a copper wiring pattern

Details Semiconductor device with a copper wiring pattern Semiconductor device with a copper wiring pattern

1997-09-04

1999-09-28

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, H01L 2943

Patent

active

059593598

ABSTRACT:
In forming a single phase CrN film suitable for a barrier film of the copper wiring, the manufacturing conditions for forming the barrier film are determined in advance. The semiconductor device is manufactured using the predetermined conditions. Single phase CrN film is preferred as a barrier film for preventing diffusion and oxidation of the Cu wiring pattern. For example, a CrN film is formed by sputtering under specific conditions in a mixing gas atmosphere of nitrogen/argon gas. The preferred barrier film for the Cu wiring pattern has a narrow nonstoiciometric composition range of Cr:N=1:0.97-0993.

REFERENCES:
patent: 5084412 (1992-01-01), Nakasaki
Mills; "Thermodynamic Relations in the Chromium-Nitrogen System"; 1972; pp. 223-234; Journal of the Less-Common Metal.
Tsuchiya et al; "Mon-stoichiometry and Antiferromagnetic Phase Transition of NaC1-type CrN Thin Films Prepared by Reactive Sputtering"; 1996; pp. 121-129; Materials Transactions, vol. 37, No. 2.

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