Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-09-26
1999-09-28
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 49, 257 50, 257 51, 257 56, 257 62, 257 64, 257 65, 257 63, 257 66, 257347, 257350, 257352, 257369, H01C 2904
Patent
active
059593130
ABSTRACT:
Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
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Teramoto Satoshi
Yamazaki Shunpei
Abraham Fetsum
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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