Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product
Patent
1994-02-18
1997-04-29
Lesmes, George F.
Radiation imagery chemistry: process, composition, or product th
Electric or magnetic imagery, e.g., xerography,...
Radiation-sensitive composition or product
430 84, 430 95, 430128, G03G 1500
Patent
active
056247761
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to an electrophotographic photosensitive member comprising a substrate and a light receiving layer composed of a non-single crystal silicon material containing a plurality of columnar structure regions therein which is disposed on said substrate, and a process for the production of said electrophotographic photosensitive member.
RELATED BACKGROUND ART
The material of the photoconductive layer of an electrophotographic photosensitive member is required to have a high sensitivity, high S/N ratio, absorption spectral characteristic matching the spectral characteristic of electromagnetic wave to be irradiated, rapid optical responsibility, and high dark resistance, to be excellent in mechanical durability, and to be not harmful to the human body at the time of use.
The public attention has been focused on the use of hydrogenated amorphous silicon materials capable of satisfying the above requirements in electrophotographic photosensitive members. Electrophotographic photosensitive members having a photoconductive layer formed of such hydrogenated amorphous silicon material are disclosed, for example, in Japanese Unexamined Patent Publication No. 86341/1979. Various electrophotographic photosensitive members having an amorphous silicon photoconductive layer have been frequently used.
Japanese Unexamined Patent Publications Nos. 62254/1981 and 119356/1982 disclose the use of hydrogenated amorphous silicon materials containing carbon atoms in electrophotographic photosensitive members in order to improve their electrophotographic characteristics.
Incidentally, the formation of a film of such amorphous silicon material as above described as a constituent of the electrophotographic photosensitive member can be conducted by the sputtering process, film-forming manner by decomposing raw material gas with the action of thermal energy (that is, the so-called thermal-induced CVD process), film-forming manner by decomposing raw material gas with the action of light energy (that is, the so-called light-induced CVD process), or film-forming manner by decomposing raw material gas with the action of plasma (that is, the so-called plasma CVD process). Of these film-forming processes, the plasma CVD process has been frequently used. And there are known various apparatus suitable for practicing the plasma CVD process.
As the plasma CVD process, there is known the so-called microwave plasma CVD process based on microwave glow discharge decomposition. The microwave plasma CVD process has been practiced on an industrial scale.
The microwave plasma CVD process is more advantageous in comparison with other film-forming processes in the viewpoints that a relatively higher deposition rate and a relatively higher raw material gas utilization efficiency are attained. U.S. Pat. No. 4,504,518 discloses a microwave plasma CVD technique of making use of these advantages. The microwave plasma CVD technique described in this patent literature is directed to the formation of a high quality deposited film at a high deposition rate by practicing the microwave plasma CVD process at a reduced pressure of 0.1 Tort or less.
Japanese Unexamined Patent Publication No. 186849/1985 discloses a technique of improving the raw material gas utilization efficiency in the microwave plasma CVD process. The technique described in this publication is to improve the raw material gas utilization efficiency by arranging a substrate to circumscribe means for introducing microwave energy thereby forming an internal chamber (that is, a discharge space). Further, Japanese Unexamined Patent Publication No. 283116/1986 discloses a technique of improving the property of a deposited film formed by conducting the formation of the deposited film while controlling ion bombardment to the film deposited by applying a desired voltage through a plasma potential-controlling electrode (that is, a bias electrode) disposed in the discharge space.
U.S. Pat. No. 5,129,359 discloses a process for producing an electrophotographic p
REFERENCES:
patent: 4269919 (1981-05-01), Kuehnle
patent: 4737430 (1988-04-01), Kinoshita et al.
patent: 4789646 (1988-12-01), Davis
patent: 5162181 (1992-11-01), Fujimoto et al.
patent: 5213922 (1993-05-01), Matsuo et al.
Ohtoshi Hirokazu
Okamura Ryuji
Takai Yasuyoshi
Takei Tetsuya
Yoshino Takehito
Canon Kabushiki Kaisha
Lesmes George F.
Weiner Laura
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